收藏本站
DMN2019UTS
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
V (BR)DSS
20V
R DS(ON) max
18.5m ? @ V GS = 10V
21m ? @ V GS = 4.5V
24m ? @ V GS = 2.5V
31m ? @ V GS = 1.8V
I D max
T A = 25°C
5.4 A
5.0 A
4.6 A
3.5 A
?
?
?
?
?
?
?
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
ESD Protected up to 2KV
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 standards for High Reliability
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (R DS(on) ) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Mechanical Data
? Case: TSSOP-8
? Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Applications
? Power management functions
? Load Switch
TSSOP-8
?
?
?
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Weight: 0.039 grams (approximate)
D
D
1
D
D
8
2
3
4
S1
S1
G1
S2
S2
G2
7
6
5
G1
G2
S1
S2
ESD PROTECTED TO 2kV
Top View
Bottom View
Top View
Pin Configuration
N-Channel N-Channel
Internal Schematic
Ordering Information (Note 4)
Part Number
DMN2019UTS-13
Case
TSSOP-8
Packaging
2500/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. ?
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
8
5
Logo
N2019U
YY WW
Part no
Xth week : 01~53
Year: “12” = 2012
1
4
Top View
DMN2019UTS
Document number: DS35556 Rev. 2 - 2
1 of 6
www.diodes.com
December 2012
? Diodes Incorporated
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
DMN2020LSN-7 MOSFET N-CH 20V 6.9A SC59
DMN2028USS-13 MOSFET N-CH 20V 7.3A SO8
DMN2040LSD-13 MOSFET N-CH DUAL 20V 7.0A 8-SOIC
DMN2040LTS-13 MOSFET 2N-CH 20V 6.7A 8TSSOP
DMN2041L-7 MOSFET N-CH 20V 6.4A SOT23
DMN2041LSD-13 MOSFET 2N-CH 20V 7.63A SO8
DMN2050L-7 MOSFET N-CH 20V 5.9A SOT23-3
DMN2065UW-7 MOSFET N CH 20V 2.8A SOT323
相关代理商/技术参数
DMN2020LSN 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2020LSN-7 功能描述:MOSFET MOSFET,N-CHANNEL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMN2023LSD-13 功能描述:MOSFET NMOS-DUAL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMN2027LK3 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:20V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2027LK3-13 功能描述:MOSFET ENHANCE MODE MOSFET 20V N-CHANNEL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMN2027USS 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:20V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2027USS-13 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:20V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2028UFDH-7 制造商:Diodes Incorporated 功能描述:MOSFET BVDSS: 8V-24V V-DFN3030-8 T&R 3K - Tape and Reel 制造商:Diodes Incorporated 功能描述:MOSF N CH 20V 6.8A PWRDI303008 制造商:Diodes Incorporated 功能描述:Dual MOSFET N-channel 20V 6.8A 3030-8